| abstract |
A variable resistance memory device (100, 200, 300, 400) includes a first electrode (110, 210, 310) and a second electrode (160, 260, 360). The device may includes a chalcogenide glass (140, 240, 340) layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The device also includes a metal ion source structure (150, 250, 350) between the chalcogenide glass layer and the second electrode. The device may include a buffer layer (120, 220) between the first electrode and the chalcogenide glass layer. |