| abstract |
The purpose of the invention is to provide a fine transistor. Another purpose of the invention is to provide a transistor with low parasitic capacitance. Another purpose of the invention is to provide a transistor with high frequency characteristics. Another purpose of the invention is to provide a novel transistor. Provided is a method for manufacturing a transistor, comprising a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator, wherein: a hard mask layer that has a fourth conductor on the second insulator and a third insulator on the fourth conductor is formed; an opening is formed on the second insulator using the hard mask layer as a mask; the hard mask layer is removed by the formation of the opening; and the first insulator and the first conductor are formed at the opening. |