http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016175840-A1

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publicationDate 2016-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2016175840-A1
titleOfInvention Sensing a property of a fluid
abstract In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.
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