http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016171122-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9c9b723af2211f78077c5b2d6a04ccd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5360936c9a295a66bfb44366a1bcd844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3b7e57e6e21e8ca6f0b8e2a8a5bf222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d56da5136789786326167391126655f |
| publicationDate | 2016-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016171122-A1 |
| titleOfInvention | Semiconductor device and method for manufacturing same |
| abstract | In this semiconductor device 1, a metal wire 8 is connected to a thermal stress relaxation member 4 that is joined to a surface electrode 2 of a semiconductor element 3. The thermal stress relaxation member 4 is provided with a base part 6 and a projecting part 7 provided on the base part 6, the tip face of the projecting part 7 being joined to the surface electrode 2 of the semiconductor element 3, and the metal wire 8 being connected on the surface of the base part 6 on which the projecting part 7 is provided. According to the present invention, it is possible to provide a semiconductor device 1 with which it is possible to prevent damage to the surface electrode 2 of the semiconductor element 3, or to the joint 5 between the surface electrode 2 of the semiconductor element 3 and the thermal stress relaxation member 4, and to improve connection reliability between the semiconductor element 3 and the metal wire 8 without reducing the strength with which the thermal stress relaxation member 4 and the surface electrode 2 of the semiconductor element 3 are joined together. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7052444-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019159189-A |
| priorityDate | 2015-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.