| abstract |
The present invention provides a very small transistor. A semiconductor device having a semiconductor on a substrate, a first and second conductor on the semiconductor, a first metal oxide that contacts the first conductor, a second metal oxide that contacts the second conductor, a first insulator on the first metal oxide and the second metal oxide, a second insulator on the semiconductor, a third insulator on the second insulator, and a third conductor on the third insulator, the third insulator contacting a side surface of the first insulator, the semiconductor having: a first region in which the semiconductor and the bottom surfaces of the first conductor and the second metal oxide overlap; a second region in which the semiconductor and the bottom surfaces of the second conductor and the second metal oxide overlap; and a third region in which the semiconductor and the bottom surface of the third conductor overlap, the distance between the top surface of the conductor and the bottom surface of the third conductor being greater than the distance between the first region and the third region. |