http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016158464-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_646018b7183a929bbb6e26dcdb62a8da |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-112 |
| filingDate | 2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fb54e91217f3955999c9ca7d4f499a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0578460c4053657709bf6315a2a841be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c354097a3dd6e990abfba4c90467ebcf |
| publicationDate | 2016-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016158464-A1 |
| titleOfInvention | Multilayer board with inbuilt varistor, and method of manufacturing same |
| abstract | A multilayer board with an inbuilt varistor, characterized in comprising, a first dielectric layer, a first diffusion preventing layer, a varistor layer, a second diffusion preventing layer and a second dielectric layer, laminated in this order, and a first internal electrode and a second internal electrode disposed respectively on one of the principal surfaces of the varistor layer, wherein: in the first dielectric layer and the second dielectric layer, the surface area ratio of voids is less than 5%, the electrical resistivity is at least equal to 1010 Ω·cm, and the relative dielectric constant is between 6 and 9; the first diffusion preventing layer and the second diffusion preventing layer include a Zn-Si oxide, the main component of which is Zn 2 SiO 4 , and a Bi-Si oxide; the main phase of the varistor layer is ZnO; and a Zn-Bi-Si-M oxide (where M is at least one of Co, Mn or Cr) and/or a Zn-Si-M oxide (where M is at least one of Co, Mn or Cr) exist at the ZnO grain boundaries or grain boundary triple points. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110467818-A |
| priorityDate | 2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 99.