| abstract |
This oxide sintered body comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and unavoidable impurities, and is an IGZO sintered body characterized by having an average length of cracks existing in the sintered body not smaller than 3 µm but not larger than 15 µm. The present invention addresses the problem of providing a sputtering target that enables forming of excellent thin films by reducing the occurrence of cracking in the target and reducing generation of particles when depositing is performed by DC sputtering. |