http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016151185-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dcf8e5b631212c8c73336a698b6b4119 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-142 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-374 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335 |
| filingDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91ddc900635691d1ac2817ec23e1ad35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd1104bbebf8c5a5cacfc37a74691899 |
| publicationDate | 2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016151185-A1 |
| titleOfInvention | Quantum dot sensor readout |
| abstract | An apparatus, comprising a quantum dot graphene field effect transistor configured to operate in such a way that photons incident thereon cause electron-hole pairs to be formed;a connector element connected to the back gate of the quantum dot graphene field effect transistor;a switch element configured to function as an output switch in order to provide an output for a current flowing through the quantum dot graphene field effect transistor; wherein the quantum dot graphene field effect transistor is configured to be back gate biased via the connector element connected to the back gate in such a way that the electrons or the holes formed are trapped in an at least one quantum dot and respectively the holes or the electrons migrate to the channel of the quantum dot field effect transistor; and wherein a drain to source voltage connected to the quantum dot graphene field effect transistor causes a current proportional to the charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel. |
| priorityDate | 2015-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581 |
Total number of triples: 22.