http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016143053-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-416 |
| filingDate | 2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3342ad160569da49f672b9d61e7ff460 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d4b0b3f9c8dc2704ea5965ee8881b92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53a207e2f181f090806efb617678ea6a |
| publicationDate | 2016-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016143053-A1 |
| titleOfInvention | Gas sensor and sensor device |
| abstract | This gas sensor is provided with: a p-type semiconductor layer (1), which contains copper or silver, and is in contact with a gas to be detected; a first electrode (2), i.e., a Schottky electrode with respect to the p-type semiconductor layer; a high-resistance layer (3), which is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode are partially in contact with each other, and which has a higher resistance than the p-type semiconductor layer and the first electrode; and a second electrode (4), i.e., an ohmic electrode with respect to the p-type semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018194314-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019106350-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019015675-A |
| priorityDate | 2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.