| abstract |
A polishing method is provided which yields a negatively charged substrate with excellent surface smoothness with good productivity while achieving high polishing speeds. Also provided is a method for achieving a negatively charged substrate with high surface smoothness. In this method of manufacturing a negatively charged substrate using a polishing slurry, the polishing slurry contains an oxide represented by compositional expression ABO 3 (A represents at least one element selected from the group consisting of Sr and Ca. B represents at least one element selected from the group consisting of Ti, Zr and Hf.) and zirconium oxide, and the polishing method involves carrying out, at least once each, a polishing step a for polishing a negatively charged substrate under conditions in which the zeta potential of the polishing slurry becomes positive, and a polishing step b for polishing the negatively charged substrate under conditions in which the zeta potential of the polishing slurry becomes negative. |