http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016132411-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 |
| filingDate | 2015-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2058b7ce461b28a7642a92db8c8a8e41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed27b573a47995dbd8248482bf19e285 |
| publicationDate | 2016-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016132411-A1 |
| titleOfInvention | Polycrystalline silicon rod, production method therefor, and fz silicon single crystal |
| abstract | In the present invention, from a region from the center (r = 0) to R/3 of a polycrystalline silicon rod, a plate-shaped sample having as a main surface a cross-section of the polycrystalline silicon rod which is orthogonal to the diameter direction thereof is collected. The plate-shaped sample is disposed at a position where a Bragg reflection from a face of Miller indices (111) is detected. The plate-shaped sample is rotated in-plane by a rotation angle Φ with the center of the plate-shaped sample serving as the rotation center in such a manner that an X-ray irradiation region defined by a slit performs a Φ scan on the main surface of the plate-shaped sample, and a diffraction chart showing the dependency, on the plate-shaped sample rotation angle, of the intensity of the Bragg reflection from the face of Miller indices (111) is determined. A ratio (S p /S t ) is calculated between a surface area S p of a peak portion that has appeared in the diffraction chart and the total surface area S t of the diffraction chart. A polycrystalline silicon rod with a surface area ratio S p /S t evaluated by the above procedure that is 2% or less is selected. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109252215-A |
| priorityDate | 2015-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.