| abstract |
The invention relates to a structure (100) having an intermediate bandgap, the structure (100) including at least one first layer (1) intended to form a first emitter, one second layer (3) intended to form a second emitter and one intermediate bandgap layer (5) intermediate between first and second layers (1, 3), and to a process for fabricating the structure (100) comprising steps of: a) providing the first layer (1) made of a first semiconductor on a first substrate (2), b) providing an elementary stack comprising the intermediate bandgap layer (5) made of an intermediate bandgap semiconductor on the second layer (3) made of a second semiconductor material on a second substrate (4), c) bonding by direct bonding the intermediate bandgap layer (5) to the first layer (1), and d) removing at least one substrate chosen from the first substrate (2) and the second substrate (4) so as to obtain the structure (100). |