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publicationDate 2016-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2016105348-A1
titleOfInvention Optimizing gate profile for performance and gate fill
abstract Systems and methods of optimizing a gate profile for performance and gate fill are disclosed. A semiconductor device having an optimized gate profile includes a semiconductor substrate and a fin extending above the semiconductor substrate. A pair of source and drain regions are disposed on opposite sides of a channel region. A gate stack is disposed over the channel region, where the gate stack includes a top portion separated from a bottom portion by a tapered portion. The top portion and at least a portion of the tapered portion are disposed above the fin.
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