| abstract |
Provided is a microstructure formation method with which a high-quality heterogeneous semiconductor microstructure can be formed on a substrate. A trench 14 is formed in an SiO 2 film 12 or the like which has been formed on the upper surface of a monocrystalline silicon substrate 10, the (001) crystal surface 15 of the monocrystalline silicon substrate 10 is exposed at the bottom of the trench 14, the trench 14 is packed with indium phosphide 16, the packed indium phosphide 16 is rendered amorphous by injection of an ionized impurity, and the amorphous indium phosphide 16 is heated and then slow-cooled to recrystallize the indium phosphide 16 from the (001) crystal surface 15. During heating of the amorphous indium phosphide 16, the indium phosphide 16 is heated by a laser scanner 24 arranged to the upper surface side of the monocrystalline silicon substrate 10, and during slow-cooling of the amorphous indium phosphide 16, the intensity of the laser beam L from the laser scanner 24 is gradually decreased. |