| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-52 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-52 |
| filingDate |
2014-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b174fc47a84c8e3a8d11caf465fefa90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd83068c294df6f2e0e5842a26fbc5f0 |
| publicationDate |
2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2016079881-A1 |
| titleOfInvention |
Semiconductor power module, method for manufacturing same and mobile object |
| abstract |
A semiconductor device (a semiconductor power module) 9 which comprises: a semiconductor chip 1; a ceramic substrate 5 that is connected to the semiconductor chip 1, with a solder alloy (a lead-free solder alloy) 2b being interposed therebetween; an external terminal that is electrically connected to the semiconductor chip 1; and a metal plate for heat dissipation 12 that is connected to the ceramic substrate 5, with a solder alloy (a lead-free solder alloy) 2c being interposed therebetween. The solder alloys 2b, 2c in the semiconductor device 9 are bonding materials, each of which is composed of 1-7% by weight of Cu and 3-15% by weight of Sb with the balance made up of Sn, and is bonded at a temperature of 280°C or more. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022244395-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022259633-A1 |
| priorityDate |
2014-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |