| abstract |
The invention relates to a method for separating a carbon structure (1) deposited on a seed structure (2), for example graphene, carbon nanotubes or semiconductor nanowires, from the seed structure (2). In order to simplify the production of carbon structures, and in particular to provide a method in which the separation of the carbon structure from the seed structure proceeds within the process chamber in which the deposition takes place, it is proposed: preparing of a carbon structure deposited on a seed structure (2) in a process chamber of a CVD reactor; heating of the substrate comprising the seed structure (2) and the carbon structure (1) to a process temperature; injecting of at least one etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, where O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero; converting of the seed structure (2) through a chemical reaction with the etching gas into a gaseous reaction product; and removing of the gaseous reaction product from the process chamber by means of a carrier gas flow. |