| abstract |
The invention provides the use of at least one binary group 15 element compound of the general formula R 1 R 2 E-E'R 3 R 4 (I) or R 5 E(E'R 6 R 7 )2 (II) as the educt in a vapor deposition process. In this case, R 1 , R 2 , R 3 and R 4 are independently selected from the group consisting of H, an alkyl radical (C1 - C10) and an aryl group, and E and E' are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations - compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods. |