| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73d55b44219a84c850812a4488def924 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate |
2015-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7da78b7d4cf3238eebbf16ad7a5273d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7add21c3bc757d0ab4aa11401068e0eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abbae9ca976b07447a8295b6cc50a9dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c49ff7a24b18b2e1c6ef79cbc24176d |
| publicationDate |
2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2016039415-A1 |
| titleOfInvention |
Method for producing silicon carbide crystals and crystal production device |
| abstract |
Provided is a method whereby single crystals of silicon carbide can be grown on an off substrate formed of silicon carbide while preventing surface roughening.nA method for producing silicon carbide crystals, said method comprising rotating a silicon carbide seed crystal while contacting with a starting material solution containing silicon and carbon, characterized in that: a crystal growth plane of the seed crystal has an off angle; and the rotation center of the seed crystal is positioned in a downstream side, relative to the center position of the seed crystal, along the step flow direction corresponding to the off angle formation direction. |
| priorityDate |
2014-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |