| abstract |
Provided are: an oxide sintered body, which contains indium, tungsten and zinc, includes a bixbite-type crystalline phase as a main component, has an apparent density of 6.8-7.2 g/cm 3 (exclusive of 6.8), has a tungsten content of 0.5-1.2 at% (exclusive of 0.5) with respect to the total of indium, tungsten and zinc, and has a zinc content of 0.5-1.2 at% (exclusive of 0.5) with respect to the total of indium, tungsten and zinc; a method of manufacturing said oxide sintered body; a sputter target including said oxide sintered body; and a semiconductor device (10) including an oxide semiconductor layer (14) formed by sputtering using said sputter target. |