Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0033 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
filingDate |
2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75e262f620203199c381028cbb6df18a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cd34472c6e1b6669f04772f8ed0e0c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55c3665bd652f150280b35ae8b215f46 |
publicationDate |
2016-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2016022527-A1 |
titleOfInvention |
Engineered band gaps |
abstract |
An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moire superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106129256-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106129259-A |
priorityDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |