| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81b8199fcde20ce62bf26051a5af14e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_925b2ace03a97862b8dfebe4d38e55c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd7379a3d3c84cf37d91e6d18fb27799
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37272c7522e47f228bea7fbbebb995e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95e6df441e49a7833883f1dbdbad4bda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ca82d1a8d57f21d26321540f4530e16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d368c716daf567ca6ee7f9b5eb2aae78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5257c93188b82fb1fe1d9e57e0e8918
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_946c87d4f0dd363c3996f02a475ad89f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15cdf9cbe1cca6fd6dd5620ef8a987b |
| publicationDate |
2016-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2016022098-A1 |
| titleOfInvention |
Apparatus and methods to create microelectronic device isolation by catalytic oxide formation |
| abstract |
Non-planar transistor devices which include oxide isolation structures formed in semiconductor bodies thereof through the formation of an oxidizing catalyst layer on the semiconductor bodies followed by an oxidation process. In one embodiment, the semiconductor bodies may be formed from silicon-containing materials and the oxidizing catalyst layer may comprise aluminum oxide, wherein oxidizing the semiconductor body to form an oxide isolation zone forms a semiconductor body first portion and a semiconductor body second portion with the isolation zone substantially electrically separating the semiconductor body first portion and the semiconductor body second portion. |
| priorityDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |