http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016021806-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_feb03de036e93e10c4497dcbf96d3911
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
filingDate 2015-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94df87e0af736c169e1e2374d21cc489
publicationDate 2016-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2016021806-A1
titleOfInvention High-performance selective emitter element and method for manufacturing same
abstract The present invention relates to a selective emitter element and a method for manufacturing same. The selective emitter element of the present invention comprises: a semiconductor substrate; an emitter layer which includes, on the substrate, first regions having a predetermined period and a second region located between the first regions, the height of the upper surfaces of the first regions being higher than or equal to the height of the upper surface of the second region; and a transparent conductive layer formed on the emitter layer.
priorityDate 2014-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.