| abstract |
Embodiments described herein provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a RF transceiver incorporating a TCSAW device. The TCSAW device includes a piezoelectric substrate (104), a plurality of electrodes (108) formed on a first surface of the piezoelectric substrate (104), an amorphous silicon layer (128) formed over the plurality of electrodes (108), and a temperature compensating layer (124) formed over the amorphous silicon layer (128). |