http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016014136-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2afb71c3e2033be43724913a6f71f2c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_706b51800430f8c2acde47d9af9c48f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b9b3321860c1424bedae0a7a4721a2c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c60fff14ef82dcc2e61b15e594b76db8 |
| publicationDate | 2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016014136-A1 |
| titleOfInvention | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| abstract | Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11694911-B2 |
| priorityDate | 2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.