http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016013259-A1

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filingDate 2015-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd199a013f40f17382e5a2a0b90138ea
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publicationDate 2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2016013259-A1
titleOfInvention Gallium nitride substrate
abstract This gallium nitride substrate has a surface with a diameter of 100mm or greater. In square regions having 2mm sides in each of a total of five sites, including the center and four peripheral sites on the surface of the gallium nitride substrate, the difference between the maximum value and minimum value of the frequency at the highest of the peaks corresponding to the E 2 n H phonon modes in microscopic Raman scattering mapping measurement is 0.1-2cm -1 , and, at all five of the measurement points, the difference between the maximum value and minimum value of the frequency at the highest of the peaks corresponding to the E 2 n H phonon modes is less than or equal to 2cm -1 .
priorityDate 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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