| abstract |
Disclosed herein is a circuit assembly including a polyetherimide dielectric layer; a conductive metal layer disposed on the dielectric layer; and a supporting metal matrix layer disposed on the dielectric layer on a side opposite the conductive metal layer. The polyetherimide dielectric layer includes a polyetherimide having a glass transition temperature of 200°C or more. The circuit assembly has the same adhesion, within + 10%, as determined by IPC-TM-650 test methods, before and after thermal stress at 280°C for 30 minutes in accordance with SJ 20780-2000. Also disclosed are methods of preparing the circuit assembly, and articles including the circuit assembly. |