http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015171235-A1
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| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
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| filingDate | 2015-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e56fe288cd35f37620082074f6b9e7a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74138d79822d0603b2bf1f1095bc132c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38ebd16830f20bd6e08d5b4cebd0f535 |
| publicationDate | 2015-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2015171235-A1 |
| titleOfInvention | Efficient reprogramming method for tightening a threshold voltage distribution in a memory device |
| abstract | Techniques are provided for programming memory cells while reducing the effects of detrapping which cause a downshift in the threshold voltage distribution. Detrapping is particularly problematic for charge-trapping memory cells such as in a 3D stacked non-volatile memory device. During programming, a temporary lockout mode is provided for memory cells which pass a verify test. During a checkpoint program-verify iteration, all memory cells of a target data state are subject to the verify test. The memory cells in the temporary lockout mode are therefore subject to the verify test a second time. Memory cells that fail the verify test in the checkpoint program-verify iteration are programmed further. A normal or slow programming mode is used for a memory cell depending on whether it had reached the temporary lockout mode. Threshold voltage distributions are narrowed by reprogramming some of the memory cells. |
| priorityDate | 2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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Total number of triples: 23.