| abstract |
According to an embodiment of the present invention, a thin film transistor includes a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer includes an oxide including: a first region; a second region; a third region that is provided between the first region and the second region; a fourth region having the first region disposed between the fourth region and the third region; and a fifth region having the second region disposed between the fifth region and the third region. The source electrode is electrically connected to the first region. The drain electrode is electrically connected to the second region. A first thickness of the first region, said first thickness intersecting the first direction in which the first region and the second region are connected, and being in the second direction in which the first region and the source electrode are connected, is less than a third thickness of the third region, the fourth region and the fifth region, said third thickness being in the second direction. A second thickness of the second region, said second thickness being in the second direction, is less than the third thickness. |