| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de094784025e53546f898a3de5a5e393 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7854 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22ab7ece34482e0e8f53d5fc3f7a9ee8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5723389495ceaa3ccf432d00726df06 |
| publicationDate |
2015-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015142847-A1 |
| titleOfInvention |
Integrated circuit with multi-threshold bulk finfets |
| abstract |
A method for manufacturing a FinFET having a fin that has a fin body includes selecting a desired electrical performance parameter, selecting a base dimension of the fin, identifying a combination of fin-body doping and fin-geometry that causes the FinFET to have the desired electrical performance parameter, doping the fin body according to the identified fin-body doping, and fabricating the fin according to the fin-geometry. |
| priorityDate |
2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |