http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015137081-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bceffddb90b9b3da8a772212961764b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2015-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e161d2b1790665a380e9483981860df |
| publicationDate | 2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2015137081-A1 |
| titleOfInvention | Integrated circuit composed of tunnel field-effect transistors and method for manufacturing same |
| abstract | [Problem] To reduce parasitic capacitance and parasitic resistance, while reducing the cost and area necessary for forming a circuit wherein two tunnel field-effect transistors are electrically connected to each other.n[Solution] This integrated circuit composed of tunnel field-effect transistors is characterized in that: a first tunnel field-effect transistor, in which one of a first P-type region and a first N-type region operates as a source region and the other one operates as a drain region, and a second tunnel field-effect transistor, in which one of a second P-type region and a second N-type region operates as a source region and the other one operates as a drain region, are formed in one active region so as to have the same polarity; the first tunnel field-effect transistor and the second tunnel field-effect transistor are formed so that the first P-type region and the second N-type region are adjacent to each other; and the first P-type region and the second N-type region adjacent to each other are electrically connected by a metal semiconductor alloy film. |
| priorityDate | 2014-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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