| abstract |
Provided is a semiconductor device suitable for micro-miniaturization. The semiconductor device of the present invention has a plurality of different transistors, the active layer of the plurality of transistors is an oxide semiconductor, and the field-effect mobility of the transistor having the greatest channel length and the field-effect mobility of the transistor having the smallest channel length are approximately constant. Alternatively, the drop in field-effect mobility of the transistor having the smallest channel length, with respect to the field-effect mobility of the transistor with the greatest channel length, within a range of channel length of 0.01μｍ to 100μｍ, shall not exceed 70%. |