| abstract |
Provided is a liquid composition for etching, having, a suitable etching rate during etching of oxides comprising indium, zinc, tin, and oxygen, little change in the etching rate during dissolving of oxides, substantially no occurrence of precipitates, and negligible corrosiveness for wiring material. The present invention uses a liquid composition for etching that includes water and at least one type selected from a group comprising (A) sulfuric acid, methane sulfonic acid, or a salt of these, and has a pH value of -1-3. |