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filingDate 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e5d46a9f123de13f89c1504a794674
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publicationDate 2015-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2015109676-A1
titleOfInvention Phase-change magnetic material based non-volatile logic device and logic operation method
abstract Disclosed in the present invention are a phase-change magnetic material based non-volatile logic device and a logic operation method. The non-volatile logic device includes a magnetic head, and a bottom electrode, an insulation layer, a phase-change magnetic thin film and a top electrode attached to a substrate in turn; wherein, the phase-change magnetic material is made from a phase-change magnetic substrate doped with ferromagnetism element, and the magnetism of the material can be reversibly regulated by the noncrystalline state - crystalline state phase-change. On the basis of the phase-change magnetic control properties of the material, the present invention can achieve a "material implication" logic operation and four kinds of Boolean operations, namely "AND", "OR", "NAND" and "NOR", and the operation results can be stored in the form of residual magnetization of the material in the device, so that the effect of storing and processing information simultaneously within a single logic device can be achieved. The logic device disclosed in the present invention can be used as an elementary unit in the fields of late-model solid state memory, logic operator, programmable gate array and system on chip etc.
priorityDate 2014-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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