| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2379-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2379-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D2505-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2015-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a14ce8af59f81f1b1bf397dd74a8be8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c19ede88e23d8f803c25cddb336b6604 |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015106234-A1 |
| titleOfInvention |
Method for microwave processing of photosensitive polyimides |
| abstract |
Methods and apparatus for processing photosensitive polyimide (PSPI) films, for example for use in electronic devices, are provided herein. In some embodiments, a method for curing photosensitive polyimide (PSPI) films includes: depositing a PSPI film on a selected substrate, and curing the film by microwave heating at a selected temperature from about 200 to 340 o C in a selected atmosphere containing an oxygen concentration from about 20 to 200,000 ppm. The process atmosphere may be static or flowing. The addition of oxygen improves the removal of acrylate residue and improves the T g of the cured film, while the low processing temperature characteristic of the microwave process prevents the oxygen from damaging the polyimide backbone. The method may further include the steps of photopatterning and developing the PSPI film prior to curing. The process is particularly suitable for dielectric films on silicon for electronic applications. |
| priorityDate |
2014-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |