| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2015-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_718629ef51fd8f8a13fa900cbb31f6f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f18a63670114f3b47e239760b7287d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb86c5ef7ed264ac6d183b6435e0a9db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee4917b162768c8d7e429f740df8e21f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f2d225fd489476d638bd2cc6932e7d |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015105049-A2 |
| titleOfInvention |
Semiconductor memory device and method for manufacturing same |
| abstract |
According to one embodiment, a semiconductor memory device includes a substrate, a semiconductor pillar provided on the substrate to extend in a vertical direction, a plurality of first electrode films provided sideward of the semiconductor pillar to extend in a first direction. The plurality of first electrode films are disposed to be separated from each other along the vertical direction. The semiconductor memory device further includes a plurality of second electrode films provided between the semiconductor pillar and the first electrode films. The plurality of second electrode films are disposed to be separated from each other along the vertical direction. The semiconductor memory device further includes a first insulating film provided between the semiconductor pillar and the second electrode films, and a second insulating film provided between the second electrode film and the first electrode film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9984754-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020518135-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002880-B1 |
| priorityDate |
2014-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |