http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015098191-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P10-20 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25C1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B30-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B3-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25C1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B3-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B30-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C12-00 |
| filingDate | 2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4404b6fa20933223537620dd9b960471 |
| publicationDate | 2015-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2015098191-A1 |
| titleOfInvention | Low-α-emission bismuth and process for producing low-α-emission bismuth |
| abstract | Bismuth characterized by having an α-ray emission of 0.007 cph/cm 2 or less; and a process for producing low-α-emission bismuth, characterized by using bismuth having an α-ray emission of 0.15 cph/cm 2 or less as a starting material, electrolytically producing a bismuth nitrate solution having a bismuth concentration of 5-50 g/L and a pH of 0.0-0.4, adding a 20-60% aqueous solution of sodium hydroxide to the solution to yield a sediment including polonium, separating the resultant mixture into a sediment (1) and a filtrate (1) by filtration, and then subjecting the filtrate (1) to electrowinning to recover the bismuth. Since recent semiconductor devices have a heightened density and an increased capacity, the risks that software errors occur are increasing due to the influence of α rays from materials present around the semiconductor chips. In particular, the solder materials to be used in the close vicinity to semiconductor devices are strongly desired to have a higher purity, and materials reduced in α rays are also desired. Thus, the present invention addresses the problem of obtaining high-purity bismuth which is reduced in α-ray emission and is usable as the demanded materials. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112203983-A |
| priorityDate | 2013-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.