http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015091060-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-024 |
| filingDate | 2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6741a16e73d67208fee5e7ceeb7ae6dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a556ce889761b43adbd9f36f6cf8330 |
| publicationDate | 2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2015091060-A1 |
| titleOfInvention | Semiconductor laser diode, method for producing a semiconductor laser diode and semiconductor laser diode arrangement |
| abstract | A semiconductor laser diode is specified, comprising a semiconductor layer sequence (1) with semiconductor layers applied vertically one above another with an active layer (11), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (1), and a heat barrier layer (2) and a metallic contact layer (5) laterally adjacent to one another on a main surface (12) of the semiconductor layer sequence (1), wherein the heat barrier layer (2) is formed by an electrically insulating porous material (9). As a result, the heat arising during operation is conducted via the p-type electrode (5) to a heat sink (20) and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11245246-B2 |
| priorityDate | 2013-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.