| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_404ad0935824c097ae3f26b606020534 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate |
2014-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24ad19b877f15e2a62da75df8657227c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0611c78483f1932315303dc4f86bd9e0 |
| publicationDate |
2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015089062-A1 |
| titleOfInvention |
Patterning functional materials |
| abstract |
A method of patterning a functional material layer in an electronic device is disclosed. An etch barrier layer is provided in a first pattern over a layer of functional material, thereby forming an intermediate structure having a second pattern of uncovered functional material. The intermediate structure is contacted with an etch fluid having a siloxane compound to selectively dissolve the second pattern of uncovered functional material, thereby forming a patterned functional material layer corresponding to the first pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11319632-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11678522-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105428553-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222936-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105428553-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11459659-B2 |
| priorityDate |
2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |