| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-646 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-8851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-6489 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2014-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8baf7740d4536aa149cde0a783b91eaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_073c27340e21ee79ac849e6aa40e2e02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d90efb2eae9516576e4d8002583fb863
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bce8873a395759c0cf1ec43866124e4 |
| publicationDate |
2015-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015074968-A1 |
| titleOfInvention |
Method for the optical characterization of an optoelectronic semiconductor material and device for carrying out the method |
| abstract |
A method is provided for the full-area optical characterization of an optoelectronic semiconductor material (1) that is intended for producing a plurality of optoelectronic semiconductor chips and has a band gap gap through which a characteristic wavelength of the semiconductor material (1) is passed, comprising the steps of: A) irradiating the full area of the main surface (11) of the optoelectronic semiconductor material (1) with light (20) with an excitation wavelength that is less than the characteristic wavelength of the semiconductor material (1), for generating electron-hole pairs in the semiconductor material (1); B) full-area detection of the recombination radiation (30) with the characteristic wavelength that is radiated as a result of recombination of the electron-hole pairs from the main surface (11) of the semiconductor material (1).nA device (100) for carrying out the method is also provided. |
| priorityDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |