http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015070465-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d37147a1eebc1b4c794a203b6f0da7e5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2013-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a28fbcd5bb177dc025aec32335fe9dfe |
| publicationDate | 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2015070465-A1 |
| titleOfInvention | Polysilicon fabrication method that can control growth direction of polysilicon |
| abstract | The present invention provides a polysilicon fabrication method that can control a growth direction of polysilicon, comprising the following steps: step 1, depositing and forming a first buffer layer (20) on a substrate (10); step 2, forming a lens-like structure (22) on a surface of the first buffer layer (20) through a photo masking process; step 3, depositing and forming an amorphous silicon layer (40) on the first buffer layer (20) with the lens-like structure (22) formed on the surface; step 4, cleaning the amorphous silicon layer (40); step 5, using a strong light (50) to illuminate the amorphous silicon layer (40) from a side of the substrate (10) so as to make seed crystals be generated at a bottom of the amorphous silicon layer (40); and step 6, performing laser annealing processing on the amorphous silicon layer (40) with the seed crystals generated so as to make amorphous silicon in the amorphous silicon layer (40) crystallize and form a polysilicon layer (70). The present invention can control the growth direction of the polysilicon. |
| priorityDate | 2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.