| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ed2ff73c389a8d8884aea09e3203340 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a38ac1319f648355620a5eb355f37ce6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a37c1678222005e498da0e60b15e670
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8cad3af144d6090e5ae10807522b78f |
| publicationDate |
2015-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015062331-A1 |
| titleOfInvention |
Method for repairing damages to sidewall of ultra-low dielectric constant film |
| abstract |
A method for repairing damages to a sidewall of an ultra-low dielectric constant film, comprising: depositing an ultra-low dielectric constant film (101) onto a semiconductor substrate (100); dry etching the ultra-low dielectric constant film (101) to form therein a sidewall structure; employing a chemical solution containing -O-C(Re)x and an unsaturated hydrocarbon for wet cleaning; and, irradiating with ultraviolet rays. This allows for damages to the sidewall of the ultra-low dielectric constant film to be repaired, thus restoring the pore size and porosity of the ultra-low dielectric constant film, and allowing the effective dielectric constant to be kept at minimum. |
| priorityDate |
2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |