http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015038389-A1

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filingDate 2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5640abe1cdb9b47df93d08701e73c80e
publicationDate 2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2015038389-A1
titleOfInvention Imaging cell array integrated circuit
abstract A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output, therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105679858-A
priorityDate 2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.