Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc62792656aa2e858252e97e5ffaca79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c081faa170f45fe6525aafea327bab83 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14652 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1461 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 |
filingDate |
2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5640abe1cdb9b47df93d08701e73c80e |
publicationDate |
2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2015038389-A1 |
titleOfInvention |
Imaging cell array integrated circuit |
abstract |
A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output, therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105679858-A |
priorityDate |
2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |