| abstract |
Provided is a nitride semiconductor crystal, the diameter of the crystal being at least 4 inches, the curvature radius of warping thereof being at least 100 m, and the concentration of impurities in the crystal being 1×10 17 /cm 3 or less. Also provided is: a method for manufacturing a nitride semiconductor crystal for which the growth temperature of a GaN crystal is at least 1200°C, the method provided with a step for preparing a substrate, a step for supplying trihalogenated gallium gas at a partial pressure of 9.0×10 -3 atm or greater onto the substrate, and a step for growing a GaN crystal on the substrate in the –C axis direction; or a method for manufacturing a nitride semiconductor crystal for which the growth temperature of an AlN crystal is at least 1400°C, the method provided with a step for preparing a substrate, a step for supplying trihalogenated aluminum gas at a partial pressure of 9.0×10 -3 atm or greater onto the substrate, and a step for growing an AlN crystal on the substrate in the –C axis direction. |