| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f1132cfcd850b4afa5da3f9e093c614 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2014-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc4207938b5c79b2cc8f4ac03d8f5b90 |
| publicationDate |
2015-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2015003100-A1 |
| titleOfInvention |
Partially recessed channel core transistors in replacement gate flow |
| abstract |
In described examples, an integrated circuit (100) includes a substrate (102). A first MOS transistor (106) includes a first replacement gate (152) disposed on a first dielectric layer (148) and a first channel. The first channel extends adjacent the first dielectric layer (148) along both a horizontal and a vertical surface. A second MOS transistor (108) includes a second replacement gate (154) disposed on a second dielectric layer (150) and a second channel. The second channel extends adjacent the second dielectric layer (150) along a horizontal surface and not a vertical surface. The first dielectric layer (148) and the second dielectric layer (150) have substantially equal composition. The first replacement gate (152) and the second replacement gate (154) have substantially equal composition. The first MOS transistor (106) and the second MOS transistor (108) have a same polarity. |
| priorityDate |
2013-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |