http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014192282-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc6220b93fae4be14ada49e4ecc1860b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2014-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c4f156345c3805e6182bf524cca245b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14f9cd156f44fba3c0cd6d90e4696613 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66397fa343cac11955c073cd66f88b3c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52f4ce891c8b7ab963f8b34a52cc27ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c1204ee5a2b4bafe749a37b4be6eb57 |
| publicationDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014192282-A1 |
| titleOfInvention | Organic thin film transistor |
| abstract | The purpose of the present invention is to obtain an organic thin film transistor having a structure in which the reliability of the achievement of a characteristic-improving effect is improved. The present invention is an organic thin film transistor (1) that is provided with an organic semiconductor layer (40), a source electrode (50), a drain electrode (60), a gate electrode (20), and a gate insulating film (30) and wherein: a first high-concentration section (43) is provided in an area within the organic semiconductor layer (40) that extends toward the drain electrode (60) side from an end position (A) of the source electrode (50) on the drain electrode side to a position defined by a distance (x 1 ), said high-concentration section (43) having a higher concentration of impurities than the concentration of impurities in the area on the drain electrode (60) side that is adjacent to the aforementioned area; and, when the distance between the source electrode (50) and the drain electrode (60) is L, x 1 < L. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I559549-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379251-B1 |
| priorityDate | 2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.