http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014189125-A1

Outgoing Links

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filingDate 2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b1163ce8eb36962cfa898e4cd088077
publicationDate 2014-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2014189125-A1
titleOfInvention Thin film transistor and matrix circuit
abstract This thin film transistor (10) is a bottom-gate thin film transistor that is provided with a gate electrode (30), a gate insulating film (40), a semiconductor layer (60), a source electrode (70) and a drain electrode (80). This thin film transistor (10) is also provided with electrode wiring lines (71, 81) that extend respectively from the source electrode (70) and the drain electrode (80), and an insulating resin part (50) that is provided on the gate insulating film (40) so as to intervene between the electrode wiring lines (71, 81) and the gate insulating film (40). The insulating resin part (50) is provided at least at a position where the outer peripheral portion of the gate electrode (30) and the electrode wiring lines (71, 81) overlap each other.
priorityDate 2013-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Incoming Links

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Total number of triples: 25.