| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f04d319aaa6e66f240244bc905f452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_700fe75857639b7afed2030c9f9e8961 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G9-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G9-02 |
| filingDate |
2014-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecbc4a479f6d2fc09e982af5901bd8dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ba243cd6ab83308829c09a6986443f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b4718125ce6d7a4f7d72bd8a73bb9ef |
| publicationDate |
2014-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014182129-A1 |
| titleOfInvention |
Manufacturing method of zinc oxide nanorod arrays and nanorod arrays made by the same and semiconductor device using the same |
| abstract |
Disclosed are a method of manufacturing zinc oxide nanorod arrays grown in a certain pattern in a predetermined region of a nitride semiconductor, and zinc oxide nanorod arrays manufactured by the same. The method includes: preparing a growth substrate having a first surface and a second surface; growing a nitride semiconductor layer on the first surface of the growth substrate; placing a support substrate on the nitride semiconductor layer; forming a mask pattern on the second surface of the growth substrate; and removing the growth substrate from the nitride semiconductor layer by providing a laser beam through the second surface of the growth substrate having the mask pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2633160-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105198232-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105198232-B |
| priorityDate |
2013-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |