| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2014-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fbb7b9de0a89e6b02a4ea495f48b631 |
| publicationDate |
2014-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014181785-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
To provide a semiconductor device having a structure with which the device can be easily manufactured even if the size is decreased and which can suppress a decrease in electrical characteristics caused by the decrease in the size, and a manufacturing method thereof. A source electrode layer and a drain electrode layer are formed on an upper surface of an oxide semiconductor layer. A side surface of the oxide semiconductor layer and a side surface of the source electrode layer are provided on the same surface and are electrically connected to a first wiring. Further, a side surface of the oxide semiconductor layer and a side surface of the drain electrode layer are provided on the same surface and are electrically connected to a second wiring. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707238-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10164120-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646378-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183516-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923600-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239237-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721769-B2 |
| priorityDate |
2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |