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filingDate 2014-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0abaaad778375be064f899c7953515ed
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publicationDate 2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2014168224-A1
titleOfInvention Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor
abstract The present invention provides an oxide semiconductor target which comprises a sintered oxide containing zinc, tin and oxygen and also containing aluminum at a content of 0.005 to 0.2 mass% relative to the whole mass of the sintered oxide, wherein the content of silicon relative to the whole mass of the sintered oxide is less than 0.03 mass%.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016216804-A
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priorityDate 2013-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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