| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d0709a6a2db57c41e0fa7443c6e185b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3742e02bbb315aafbaa0c36ac4504fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3faafd2846b3958d898ea67fe521884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_22fb4f9074ae1b0d9d921356920dcc58 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R2201-003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate |
2014-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fa3a02fb6697f8d51cdb8bc9cdeaae0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9924bfb64fefae0a65851448e1686a79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ba04c7498373c152a94e4ca0ab1ed50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41530561efc8596de35f801e9a7bdcc6 |
| publicationDate |
2014-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014163729-A2 |
| titleOfInvention |
Acoustic bandgap structures for integration of mems resonators |
| abstract |
Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016171772-A1 |
| priorityDate |
2013-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |